| PART |
Description |
Maker |
| GBU800 GBU808 |
8.0Amps Glass Passivated Single Phase Silico n Bridge
|
First Components International
|
| 1214-110M |
110 Watts - 50 Volts, 330μs, 10% Radar 1200 - 1400 MHz
|
Microsemi Corporation
|
| 1.4KESD48A 1.4KESD48AE3 1.4KESD48E3 1.4KESD43A 1.4 |
AXIAL-LEAD TVS
Transient Voltage Suppressor; Package: DO-35; Ppp (W): 400; Vwm (V): 110; VC (V): 243; ID (µA): 1; Tol (%): 10;
Transient Voltage Suppressor; Package: DO-35; Ppp (W): 1400; Vwm (V): 100; VC (V): 222; ID (µA): 1; Tol (%): 10;
Transient Voltage Suppressor; Package: DO-35; Ppp (W): 1400; Vwm (V): 10; VC (V): 24.7; ID (µA): 1; Tol (%): 5;
Transient Voltage Suppressor; Package: DO-35; Ppp (W): 1400; Vwm (V): 10; VC (V): 21.1; ID (µA): 1; Tol (%): 10;
Transient Voltage Suppressor; Package: DO-35; Ppp (W): 1400; Vwm (V): 120; VC (V): 267; ID (µA): 1; Tol (%): 10; 1400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AH
Transient Voltage Suppressor; Package: DO-35; Ppp (W): 1400; Vwm (V): 12; VC (V): 28; ID (µA): 1; Tol (%): 5; 1400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AH
Transient Voltage Suppressor; Package: DO-35; Ppp (W): 1400; Vwm (V): 110; VC (V): 213; ID (µA): 1; Tol (%): 5; 1400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AH
Transient Voltage Suppressor; Package: DO-35; Ppp (W): 1400; Vwm (V): 11; VC (V): 27.1; ID (µA): 1; Tol (%): 10; 1400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AH
Transient Voltage Suppressor; Package: DO-35; Ppp (W): 400; Vwm (V): 100; VC (V): 222; ID (µA): 1; Tol (%): 10; 1400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AH
|
MICROSEMI CORP-SCOTTSDALE
Microsemi, Corp.
Microsemi Corporation
|
| 1014-6A |
1000-1400 MHz, 28V, Class C, Common Base; fO (MHz): 1400; P(out) (W): 6; P(in) (W): 1.2; Gain (dB): 7; Vcc (V): 28; Cob (pF): 3.5; Case Style: 55LV-1 L BAND, Si, NPN, RF POWER TRANSISTOR
6 Watts - 28 Volts, Class C Microwave 1000 - 1400 MHz
|
Microsemi, Corp.
Microsemi Corporation
|
| FT300DM-36 FT300DM FT300DM-28 FT300DM-32 |
Phase Control SCR 300 Amperes Avg 1400-1800 Volts
|
Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
|
| 110RKI40PBF09 |
Phase Control Thyristors (Stud Version), 110 A
|
Vishay Siliconix
|
| C450PA2 C450PA1 C450T2 C450E1 C450E2 C450M1 C450M2 |
HOLDER BATTERY 1CELL AA ALUM
Phase Control SCR 1460-1640 Amperes Avg 500-1400 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| TA202412 TA202414 TA203012 TA203014 TA204012 TA204 |
Phase Control SCR (1200-1400 Amperes Avg 2400-4000 Volts) 第一阶段控制晶闸管（1200-1400安培平均2400-4000伏特
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| VVZ12-16IO1 VVZ12-12IO1 VVZ12-14IO1 |
Three Phase Half Controlled Rectifier Bridge 12 A, 1600 V, SCR
Three Phase Half Controlled Rectifier Bridge 12 A, 1400 V, SCR
Power Modules/Rectifier Bridge Modules: Three Phase, Half-control Rectifier Bridges / Three Phase, Full-control
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| VGOB36-08IO7 VGOB36-12IO7 VGOB36-14IO7 VGOB36-16IO |
Single Phase Rectifier Bridge 31 A, 1600 V, SCR
Single Phase Rectifier Bridge 31 A, 1400 V, SCR
Single Phase Rectifier Bridge 31 A, 1200 V, SCR
Power Modules/Rectifier Bridge Modules: Single Phase Half-control Bridges / Single Phase, Full-control Rectifier Bridges
|
IXYS, Corp.
IXYS Corporation
|
| CM75TF-28H |
Six-IGBT IGBTMOD 75 Amperes/1400 Volts 75 A, 1400 V, N-CHANNEL IGBT
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| 1214-30 |
30 W, 28 V, 1200-1400 MHz common base transistor
30 Watts, 28 Volts, Pulsed Radar 1200 - 1400 MHz
BJT
|
GHZTECH[GHz Technology]
|
